Web机译：工艺温度对采用TDMAT前驱体的等离子增强ALD TiN金属栅极的ALD HfO2 MOS器件功函数调制的影响 ... Novel channel materials for silicon-based MOS devices: germanium, strained silicon and hybrid crystal orientations. [D] . Joshi, Sachin Vineet. 2007. 机译：用于硅基MOS器件的新型沟道材料：锗 ... Web1 Apr 2006 · Technical Feature: Strained siliconStrained silicon — the key to sub-45 nm CMOS. Strained silicon — the key to sub-45 nm CMOS. Strain techniques, such as incorporating SiGe, should boost performance in future generations of CMOS silicon transistors without the need to radically scale transistor dimensions. Although strain is …

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Web1 Apr 2006 · The introduction of strain in the channel of a CMOS silicon transistor has been widely accepted as a way to boost integrated circuit performance by using a relatively … Web1 Dec 2014 · We developed a new bulk strained Si/SiGe CMOS technology free from any Ge-related problems, which has a 90- to 110-nm strained Si layer thicker than the limit at which misfit dislocations occur ... pa state board pals

从概念到现状，一文读懂FD-SOI - 知乎

Web和传统MOS最大不同是Well底部有个Oxide隔离着，所以叫做Silicon-on-Insulator (SOI)，所以它还是传统的Planar结构。它的结构分三部分，上面的Silicon是器件部分，中间的Oxide … WebStrained Silicon Technology - Stanford University Web工艺要素. 随着生产工艺的进步，cpu应该是越做越小？可为什么现在cpu好像尺寸并没有减少多少，那么是什么原因呢？实际上cpu厂商很希望把cpu的集成度进一步提高，同样也需要把cpu做得更小，但是因为现在的生产工艺还达不到这个要求。 tiny board games